Yeon, Chung-kyu
Attorney, Korea (2013) / Patent Attorney, Korea (2001)
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Introduction
Education
2013 Chungnam National University, Law School (J. D.)
2001 International Patent Practice Institute
1996 Seoul National University, Ph. D. in Electrical Engineering
1990 Seoul National University, Master of Electrical Engineering
1988 Seoul National University, Bachelor of Electrical Engineering
2015 Managing Partner, HMP IP group
2013 Intellectual Property adviser, Korea Trade Commission
2013 Judicial Bar Exam
2003 Managing Partner, Myung-Moon IP & Law firm (-2014)
2000 Patent Attorney Bar Exam
1999 Professor, MyungJi University, Electrical Engineering Depart.
1996 Senior Research Scientist, LG Semiconductor Co., Ltd. (-1998)
standard-essential patent evaluator, HEVC Advance (2015-present)
Litigations and Consultations in relation to Intellectual Properties, for clients including Naver, KT (Korea Telecommunication), Branson, Coway, SK Telecom, SK Communications, LS Mtron, LG Electronics, LG CNS, Samsung Electronics et al. (2000-present)
Patent Prosecutions in relation to semiconductor, electronics, software, display and electronic materials, for clients including Naver, KT (Korea Telecommunication), LS Mtron, KERI (Korea Electricity Research Institution), KAIST et al. (2000-present)
“A study on requirements for indirect patent infringement on the basis of comparison between Court decisions in Korea and the US.”, Journal of Patent and Trademark, 2013.
“Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation.", Journal of Vacuum Science and Technology(US), A 16(3), 1998.
“Study of particulate formation and its control by a radio frequency power modulation in the reactive ion etching process of SiO2 with CF4/H2 plasma.", Journal of Vacuum Science and Technology(US), A 15(1), p66, 1997.
“Effects of bias frequency on RIE lag in Electron Cyclotron Resonance Plasma Etching System.", Journal of Vacuum Science and Technology(US), A 15(3), p664, 1997.
Dynamics of particulates in the afterglow of a radio frequency excited plasma.", Journal of Vacuum Science and Technology(US), A 13, p927, 1995.
“Generation and behavior of particulates in a radio frequency excited CH4 plasma.", Journal of Vacuum Science and Technology(US), A 13, p2044, 1995.